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參數資料
| 型號： | IRHNJ3230 |
| 廠商： | International Rectifier |
| 英文描述： | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應管) |
| 中文描述： | 為200V，N溝道表面安裝抗輻射功率MOSFET（200V的電壓，表貼型抗輻射功率?溝道馬鞍山場效應管） |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IRHNJ3230 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 150
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
9.4
6.0
37
75
0.6
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
5.5
7.5
16
-55 to 150
300 (for 5s)
1.0 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
7/20/00
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
For footnotes refer to the last page
SMD-0.5
IRHNJ7230
200V, N-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ7230 100K Rads (Si) 0.40
IRHNJ3230 300K Rads (Si) 0.40
IRHNJ4230 600K Rads (Si) 0.40
IRHNJ8230 1000K Rads (Si) 0.53
I
D
9.4A
9.4A
9.4A
9.4A
PD - 93821
相關PDF資料 |
PDF描述 |
|---|---|
| IRHNJ4230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應管) |
| IRHNJ7230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應管) |
| IRHNJ8230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表貼型抗輻射功率N溝道MOS場效應管) |
| IRHQ597110 | 100V Quad P-Channel MOSFET in a 28-pin LCC package |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHNJ3230SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ3230SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ3330SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ4130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ4130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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