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參數(shù)資料
| 型號： | IRHQ597110 |
| 英文描述： | 100V Quad P-Channel MOSFET in a 28-pin LCC package |
| 中文描述： | 100V的四P溝道MOSFET的采用28引腳LCC封裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 128K |
| 代理商： | IRHQ597110 |
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
5/03/01
www.irf.com
1
For footnotes refer to the last page
LCC-28
IRHQ597110
100V, Quad P-CHANNEL
RAD-Hard
TECHNOLOGY
HEXFET
International Rectifier’s RAD-Hard
TM
HEXFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
MOSFET
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ597110 100K Rads (Si) 0.96
IRHQ593110 300K Rads (Si) 0.98
I
D
-2.8A
-2.8A
Absolute Maximum Ratings ( Per Die)
Parameter
Continuous Drain Current
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-2.8
-1.8
-11.2
12
0.1
±20
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
70
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-2.8
1.2
7.1
-55 to 150
300 (for 5s)
0.89 (Typical)
g
Pre-Irradiation
o
C
A
PD - 94210
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