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參數(shù)資料
| 型號(hào)： | IRHNB4160 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 3） |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | IRHNB4160 |
4
www.irf.com
IRHNB7160
Pre-Irradiation
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
T = 25 C
20 s PULSE WIDTH
BOTTOM
TOP
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
1000
1
10
100
T = 150 C
20 s PULSE WIDTH
BOTTOM
TOP
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
1
10
100
1000
5
6
V , Gate-to-Source Voltage (V)
7
8
9
10
11
12
20 s PULSE WIDTH
V = 50V
DS
I
D
T = 25 C
T = 150 C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R
(
D
I =
51A
V
=
GS
12V
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|---|---|
| IRHNB4260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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| IRHNB7064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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