- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384503 > IRHNB4160 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) PDF資料下載
參數(shù)資料
| 型號： | IRHNB4160 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 3） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 101K |
| 代理商： | IRHNB4160 |
www.irf.com
3
Pre-Irradiation
IRHNB7160
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 50 μA
R
DS(on)
Static Drain-to-Source
"
— 0.040 — 0.057
V
GS
= 12V, I
D
=32.5A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
"
— 0.040 — 0.057
V
GS
= 12V, I
D
=32.5A
On-State Resistance (SMD-3)
V
SD
Diode Forward Voltage
"
— 1.8 — 1.8 V
100 K Rads(Si)
1
300 - 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHNB7160
2. Part numbers IRHNB3160, IRHNB4160 and IRHNB8160
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 51A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
V
Cu
Br
n
o
T
E
m
L
)
2
m
c
(
V
e
M
y
)
g
e
n
e
M
(
E
V
e
)
g
n
m
a
R
μ
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
=
S
G
V
@
V
0
1
=
S
G
V
@
V
5
1
=
S
G
V
@
V
0
2
=
S
G
V
@
u
C
8
2
5
8
2
3
4
0
0
1
0
0
1
0
0
1
0
8
0
6
r
B
8
3
5
0
3
9
3
0
0
1
0
9
0
7
0
5
—
相關PDF資料 |
PDF描述 |
|---|---|
| IRHNJ3130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ4130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ8130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ7130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNB4260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB4Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) |
| IRHNB7064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。