參數(shù)資料
型號: IRHNB3160
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
中文描述: 抗輻射功率MOSFET表面貼裝系統(tǒng)(SMD - 3)
文件頁數(shù): 7/8頁
文件大?。?/td> 101K
代理商: IRHNB3160
www.irf.com
7
Pre-Irradiation
IRHNB7160
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature ( C)
E
A
BOTTOM
ID
23A
32A
51A
TOP
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