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參數(shù)資料
| 型號： | IRHNB3160 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 3） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 101K |
| 代理商： | IRHNB3160 |
www.irf.com
5
Pre-Irradiation
IRHNB7160
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
C
=
C
+ C
oss
ds
gd
V
C
C
=
=
=
0V,
C
C
gd
f = 1MHz
+ C
gd ,
C SHORTED
GS
iss
rss
gs
C
iss
C
oss
C
rss
0
40
80
120
160
200
240
280
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
I =
51A
FOR TEST CIRCUIT
SEE FIGURE
13
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
1000
0.0
0.5
V ,Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1000
1
10
100
1000
BY R
DS(on)
OPERATION IN THIS AREA LIMITED
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
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