參數資料
型號: IRH93150
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE)
中文描述: 抗輻射功率MOSFET的通孔(T0代- 204AE)
文件頁數: 5/9頁
文件大小: 121K
代理商: IRH93150
www.irf.com
5
Pre-Irradiation
IRH9150
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
1000
2000
3000
4000
5000
6000
7000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-22A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
1
10
100
0.0
1.0
2.0
3.0
4.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25°
°
J
C
-V , Drain-to-Source Voltage (V)
D
-
100us
1ms
10ms
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