參數資料
型號： IRH9250
廠商： International Rectifier
英文描述： TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)
中文描述： 晶體管P溝道（BVdss \u003d-為200V，的Rds（on）\u003d 0.315ohm，身份證\u003d- 14A條）
文件頁數： 1/4頁
文件大?。?/td> 163K
代理商： IRH9250
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRH9250
-200V
0.315
-14A
Features:
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
n
Ceramic Eyelets
Provisional Data Sheet No. PD-9.1392
Pre-Radiation
Notes: See page 4
-200 Volt, 0.315
, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identical
pre- and post-
radiation test conditions, International Rectifier’s P-Channel
RAD HARD HEXFETs retain
identical
electrical specifications
up to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
o
C
A
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRH9250
-14
-9
-56
150
1.2
±20
500
-14
15
-5.5
-55 to 150
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1 .6mm) from case for 10s)
11.5 (typical)
g
IRH9250
P-CHANNEL
RAD HARD
AVALANCHE ENERGY AND dv/dt RATED
HEXFET
TRANSISTOR
Next Data Sheet
Index
Previous Datasheet
To Order
相關PDF資料
PDF描述
IRHE9130 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
IRHF3130 30V N-Channel PowerTrench MOSFET
IRHF4130 30V N-Channel PowerTrench MOSFET
IRHF8130 30V N-Channel PowerTrench MOSFET
IRHF53130 30V N-Channel PowerTrench MOSFET
相關代理商/技術參數
參數描述
IRH93130 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)
IRH93150 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE)
IRH93230 制造商:未知廠家 制造商全稱:未知廠家 功能描述:-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package
IRH93250 制造商:未知廠家 制造商全稱:未知廠家 功能描述:-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package
IRHD320CW40 功能描述:整流器 400 Volt 410 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*