參數(shù)資料
型號(hào)： IRGPS60B120KD
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁(yè)數(shù)： 2/12頁(yè)
文件大小： 135K
代理商： IRGPS60B120KD
IRGPS60B120KD
2
www.irf.com
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
340
–––
40
–––
165
––– 3214 4870
––– 4783 5450
––– 8000 10320
––– 5032 6890
––– 7457 8385
––– 12500 15275
–––
72
–––
32
–––
366
–––
45
––– 4300
–––
395
–––
160
Conditions
510
60
248
I
C
= 60A
V
CC
= 600V
V
GE
= 15V
I
C
= 60A, V
CC
= 600V
V
GE
= 15V,R
G
= 4.7
,
L =200μH
Ls = 150nH
nC
μJ
T
J
= 25°C
T
J
= 125°C
μJ
Energy losses include "tail" and
diode reverse recovery.
I
C
= 15A, V
CC
= 600V
V
GE
= 15V, R
G
= 4.7
L =200μH
Ls = 150nH, T
J
= 125°C
94
45
400
58
–––
–––
–––
ns
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 240A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7
T
J
= 150°C, Vp =1200V
V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7
T
J
= 125°C
V
CC
= 600V, I
F
= 60A, L =200μH
V
GE
= 15V,R
G
= 4.7
,
Ls = 150nH
pF
Erec
t
rr
I
rr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
––– 3346
–––
–––
–––
–––
–––
μJ
ns
A
180
50
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Ref.Fig.
5, 6
7, 9
10
11
9,10
11 ,12
Min. Typ. Max. Units
1200 –––
–––
0.40
–––
2.33
–––
2.50
–––
2.79
–––
3.04
4.0
5.0
-12
–––
34.4
–––
–––
–––
650
–––
1.82
–––
1.93
–––
1.96
–––
2.13
–––
––– ±100
Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
I
C
= 50A
I
C
= 60A
I
C
= 50A, T
J
= 125°C
I
C
= 60A, T
J
= 125°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
V
CE
= 50V, I
C
= 60A, PW=80μs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
I
C
= 50A
I
C
= 60A
I
C
= 50A, T
J
= 125°C
I
C
= 60A, T
J
= 125°C
V
GE
= ±20V
–––
–––
2.50
2.75
3.1
3.5
6.0
––– mV/°C
–––
500
1350
2.10
2.20
2.20
2.40
V
V/°C
V
GE
= 15V
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
S
μA
V
FM
Diode Forward Voltage Drop
V
I
GES
Gate-to-Emitter Leakage Current
nA
8
Ref.Fig.
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
–––
μs
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