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參數(shù)資料
| 型號： | IRGPH30MD2 |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=9.0A) |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復（VCES和\u003d 1200伏，@和VGE \u003d 15V的，集成電路\u003d 9.0,9.0） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 86K |
| 代理商： | IRGPH30MD2 |
C-477
IRGPH30MD2
Short Circuit Rated
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
Short circuit rated -10μs @125°C, V
GE
= 15V
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for medium operating frequency ( 1 to
10kHz)
TM
soft ultrafast diodes
E
G
n-channel
C
V
CES
= 1200V
V
CE(sat)
≤
3.5V
@V
GE
= 15V, I
C
= 9.0A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
—
Typ.
—
—
0.24
—
6 (0.21)
Max.
1.2
2.5
—
40
—
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Preliminary Data Sheet PD - 9.1115
TO-247AC
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
15
9.0
30
30
6.0
30
10
± 20
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Absolute Maximum Ratings
Revision 2
Next Data Sheet
Index
Previous Datasheet
To Order
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PDF描述 |
|---|---|
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPH30S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH40 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
| IRGPH40F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
| IRGPH40FD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A) |
| IRGPH40K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 103A I(C) | TO-247AC |
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