| 型號(hào) | 廠商 | 描述 |
| irgpc20k 2 3 4 5 6 7 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| irgpc30f 2 3 4 5 6 7 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| irgpc30k 2 3 4 5 6 7 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| irgpc30md2 2 3 4 5 6 7 8 9 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管) |
| irgpc40f 2 3 4 5 6 7 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| irgpc40md2 2 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
| irgpc40m 2 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
| irgpc40u 2 3 4 5 6 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(超快速絕緣柵型雙極型晶體管) |
| irgpc50kd2 2 3 4 5 6 7 8 9 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| irgpc50fd2 2 3 4 5 6 7 8 9 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A) |
| irgpc50ud2 2 3 4 5 6 7 8 9 |
International Rectifier | 320 x 240 pixel format, LED or CFL Backlight |
| irgpc50md2 2 3 4 5 6 7 8 9 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| irgpc50m 2 3 4 5 6 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| irgpc50s 2 3 4 5 6 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(標(biāo)準(zhǔn)速度絕緣柵型雙極型晶體管) |
| irgpf30f 2 3 4 5 6 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| irgpf40f 2 3 4 5 6 |
International Rectifier | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| irgph20 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
| irgph30md2 2 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=9.0A) |
| irgph40f 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
| irgph40fd2 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A) |
| irgph40md2 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18A) |
| irgph40 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
| irgph40m 2 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=18A) |
| irgph50m 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A) |
| irgph50s 2 |
International Rectifier | Aluminum Electrolytic Radial Leaded Low Leakage Current Capacitor; Capacitance: 22uF; Voltage: 6.3V; Case Size: 4x7 mm; Packaging: Bulk |
| irgph50 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) |
| irgph50fd2 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A) |
| irgph50f 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) |
| irgph50md2 2 3 4 5 6 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23A) |
| irgr3b60kd2 2 3 4 5 6 7 8 9 10 11 12 13 |
International Rectifier | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| irgs14c40l 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Ignition IGBT(點(diǎn)火線圈絕緣柵雙極型晶體管) |
| irgb14c40l 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | IGBT with on-chip Gate-Emitter and Gate-Collector clamps |
| irgsl14c40l 2 3 4 5 6 7 8 9 10 11 |
International Rectifier | Ignition IGBT(點(diǎn)火線圈絕緣柵雙極型晶體管) |
| irh7054 2 3 4 5 6 7 8 |
International Rectifier | 60Volt, 0.025Ω, MEGA RAD HARD HEXFET TRANSISTOR(60V, 0.025Ω, MEGA抗輻射 HEXFET 晶體管) |
| irh8054 2 3 4 5 6 7 8 |
International Rectifier | 60Volt, 0.025Ω, MEGA RAD HARD HEXFET TRANSISTOR(60V, 0.025Ω, MEGA抗輻射 HEXFET 晶體管) |
| irh7250se 2 3 4 5 6 7 8 |
International Rectifier | 200Volt, 0.10Ω, MEGA RAD HARD HEXFET TRANSISTOR(200V, 0.10Ω, MEGA抗輻射 HEXFET 晶體管) |
| irh8250 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | LED, ULTRA BRIGHT GREEN T/H |
| irh7250 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| irh93250 2 3 4 5 6 7 8 |
International Rectifier | P-Channel, -200 Volt, 0.315 Ω, RAD HARD HEXFET(P 溝道,-200 V,0.315 Ω,抗輻射 HEXFET晶體管) |
| irhe3130 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18) |
| irhe4130 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18) |
| irhe3230 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| irhe4230 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| irhf53034 2 3 4 5 6 7 8 |
International Rectifier | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| irhf54034 2 3 4 5 6 7 8 |
International Rectifier | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| irhf57034 2 3 4 5 6 7 8 |
International Rectifier | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| irhf58034 2 3 4 5 6 7 8 |
International Rectifier | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| irhf54230 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| irhf53230 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| irhf58230 2 3 4 5 6 7 8 |
International Rectifier | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |