參數(shù)資料
型號： IRG4IBC20KDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/10頁
文件大?。?/td> 288K
代理商： IRG4IBC20KDPBF
IRG4IBC20KDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
34
—
4.9
—
14
—
54
—
34
—
180
—
72
—
0.34
—
0.30
—
0.64 0.96
10
—
Conditions
51
7.4
21
—
—
270
110
—
—
I
C
= 9.0A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25°C
I
C
= 9.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,14
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 50
, V
CPK
< 500V
T
J
= 150°C,
I
C
= 9.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 8.0A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200Aμs
T
J
= 25°C See Fig.
T
J
= 125°C 17
mJ
—
μs
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
51
37
220
160
0.85
7.5
450
61
14
37
55
3.5
4.5
65
124
240
210
—
—
—
—
—
—
—
—
—
55
90
5.0
8.0
138
360
—
—
See Fig. 10,11,14
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
—
0.49
—
2.27
—
3.01
—
2.43
3.0
—
—
-10
2.9
4.3
—
—
—
—
1000
—
1.4
—
1.3
—
—
±100
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 9.0A
I
C
= 16A
I
C
= 9.0A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 9.0A
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
I
C
= 8.0A
I
C
= 8.0A, T
J
= 150°C
nA
V
GE
= ±20V
—
—
2.8
—
—
6.0
—
—
250
V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
1.7
1.6
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
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