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參數(shù)資料
| 型號： | IRFU9110 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 62K |
| 代理商： | IRFU9110 |
4-80
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-10
-7.75
-1
0.01
0.1
1
10
E
AS
= 140mJ
CONDITIONS:
V
DD
= -25V, I
AS
= -3.1A,
L = 21mH, STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) In [(I
AS
* R) / (1.3 RATED BV
DSS
- V
DD
+1]
T
AV
, TIME IN AVALANCHE (ms)
I
A
,
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
-1
-2
-3
-4
-5
-6
I
D
,
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
0
-2
-4
-6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
-55
o
C
150
o
C
25
o
C
-4
-6
-10
-8
-8
-10
-2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
V
GS
= V
DS
, I
D
= -250
μ
A
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
180
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -3.1A
O
T
J
, JUNCTION TEMPERATURE (
o
C)
N
T
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
V
GS
= V
DS
, ID = -250
μ
A
IRFR9110, IRFU9110
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