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參數(shù)資料
| 型號(hào)： | IRFRU5505 |
| 廠(chǎng)商： | International Rectifier |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 108K |
| 代理商： | IRFRU5505 |
IRFR/U5505
HEXFET
Power MOSFET
V
DSS
= -55V
R
DS(on)
= 0.11
I
D
= -18A
8/25/97
Parameter
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252A A
I-Pak
TO-251AA
l
Ultra Low On-Resistance
l
P-Channel
l
Surface Mount (IRFR5505)
l
Straight Lead (IRFU5505)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Parameter
Max.
-18
-11
-64
57
0.45
± 20
150
-9.6
5.7
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1610B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFU5505 | 30V N-Channel PowerTrench MOSFET |
| IRFR5505 | P Channel Surface Mount HEXFET Power MOSFET(P溝道表貼型HEXFET功率MOS場(chǎng)效應(yīng)管) |
| IRFRU6215 | Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
| IRFU6215 | CAP 0.22UF 25V 10% X7R SMD-1206 TR-7-PL 3K/REEL |
| IRFR6215 | Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFRU6215 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A) |
| IRFRU9024N | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) |
| IRFRU9120N | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) |
| IRFRU9214 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A) |
| IRFRU9310 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) |
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