參數(shù)資料
型號： IRFR120
廠商： International Rectifier
英文描述： HEXFET POWER MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/7頁
文件大小： 56K
代理商： IRFR120
4-378
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR120, IRFU120
100
100
8.4
5.9
34
±
20
50
0.33
36
-55 to 175
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= 5.9A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
50V, I
D
= 5.9A (Figure 12)
V
DD
=
50V, I
D
8.4A, R
GS
= 18
, R
L
= 5.1
MOSFET Switching Times are Essentially
Independent of Operating Temperature
100
-
-
V
Gate Threshold Voltage
2.0
-
4.0
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
8.4
-
-
A
Gate to Source Leakage Current
-
-
±
500
nA
Drain to Source On Resistance (Note 2)
-
0.25
0.27
Forward Transconductance (Note 2)
2.8
4.2
-
S
Turn-On Delay Time
-
8.8
13
ns
Rise Time
-
30
45
ns
Turn-Off Delay Time
-
19
29
ns
Fall Time
-
20
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 8.4A, V
DS
= 0.8 x Rated BV
DSS
,
I
G(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-
9.7
15
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
2.2
3.3
nC
Gate to Drain “Miller” Charge
-
2.3
3.4
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
350
-
pF
Output Capacitance
-
130
-
pF
Reverse Transfer Capacitance
-
24
-
pF
Internal Drain Inductance
Measured from the Drain
Lead, 6.0mm (0.25in) from
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6.0mm (0.25in) from
Package to Source
Bonding Pad
-
7.5
-
nH
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
-
-
3.0
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
Typical Solder Mount
-
-
110
L
S
L
D
G
D
S
IRFR120, IRFU120
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR-120 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
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IRFR1205 功能描述:MOSFET N-CH 55V 44A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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