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參數(shù)資料
| 型號： | IRFR110 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | IRFR110 |
4-374
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
μ
s
100
μ
s
1ms
10ms
DC
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
2
10
1.0
0.1
1
10
10
2
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
OPERATION IN THIS
AREA LIMITED
BY r
DS(ON)
10
3
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
8
6
4
2
0
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
8
6
4
2
0
0
2
4
6
8
10
V
GS
10V
V
GS
8V
V
GS
7V
V
GS
= 6V
V
GS
5V
V
GS
4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
10
1
0.1
10
-2
0
2
4
6
8
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
V
GS
= 10V
5
4
3
2
1
0
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
r
D
,
V
GS
= 20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
)
I
D
= 3.3A
-60 -40 -20
0
20
40
60
80
100 120 140 160 180
T
J
, JUNCTION TEMPERATURE (
o
C)
3.0
2.4
1.8
1.2
0.5
0
N
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
IRFR110, IRFU110
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR110_R4941 | 功能描述:MOSFET TO-252AA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR1109A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR110A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFR110ATF | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR110ATM | 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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