參數(shù)資料
型號： IRFR110
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
中文描述： 4.7 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/7頁
文件大?。?/td> 60K
代理商： IRFR110
4-372
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR110, IRFU110
100
100
4.7
3.3
17
±
20
30
0.2
19
-55 to 175
UNITS
V
V
A
A
A
V
W
W/
o
C
mj
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
J
= 150
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= 3.3A, V
GS
= 10V (Figures 8, 9)
100
-
-
V
Gate to Threshold Voltage
2
-
4
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current
I
D(ON)
I
GSS
r
DS(ON)
4.7
-
-
A
Gate to Source Leakage Current
-
-
±
100
nA
Drain to Source On Resistance
(Note 4)
-
0.41
0.540
Forward Transconductance (Note 4)
g
fs
V
DS
= 50V, I
DS
= 3.3A (Figure 12)
V
DD
= 50V, I
D
≈
5.6A, R
GS
= 24
, R
L
= 9.1
,
V
GS
= 10V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
1.3
2.0
-
S
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
-
7.6
11
ns
Rise Time
-
24
36
ns
Turn-Off Delay Time
-
14
21
ns
Fall Time
-
14
21
ns
Total Gate Charge
V
GS
= 10V, I
D
≈
5.6A, V
DS
= 0.8 x Rated BV
DSS
,
R
L
= 14
, I
G(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operat-
ing Temperature
-
5.2
7.7
nC
Gate to Source Charge
-
1.5
-
nC
Gate to Drain “Miller” Charge
-
2.2
-
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
L
D
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 11)
-
180
-
pF
Output Capacitance
-
82
-
pF
Reverse Transfer Capacitance
-
15
-
pF
Internal Drain Inductance
Measured from the
Drain Lead, 6mm
(0.25in) from Package
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured from The
Source Lead, 6mm
(0.25in)fromHeaderto
Source Bonding Pad
-
7.5
-
nH
Junction to Case
R
θ
JC
R
θ
JA
-
-
5.0
o
C/W
o
C/W
Junction to Ambient
Free Air Operation
-
-
110
L
S
L
D
G
D
S
IRFR110, IRFU110
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR110_R4941 功能描述:MOSFET TO-252AA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR1109A 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR110A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFR110ATF 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR110ATM 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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