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參數(shù)資料
| 型號(hào)： | IRFPS59N60C |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的開關(guān)電源 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | IRFPS59N60C |
IRFPS59N60C
Static @ T
J
= 25°C (unless otherwise specified)
2
www.irf.com
Parameter
Typ.
–––
–––
–––
Max.
TBD
35
39
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 35A, V
GS
= 0V
T
J
= 25°C, I
F
= 35A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
770 1150
20
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.2
V
ns
μC
30
Diode Characteristics
59
240
A
Parameter
Min. Typ. Max. Units
600
–––
–––
0.43
–––
––– 0.045
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 35A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
6.0
100
500
100
-100
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25°C (unless otherwise specified)
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
0.24
–––
Max.
0.32
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Parameter
Min. Typ. Max. Units
35
–––
–––
––– 490 I
D
= 35A
–––
–––
100
–––
–––
250
–––
33
–––
–––
110
–––
–––
86
–––
–––
18
–––
––– 10490 –––
–––
5140 –––
–––
280
–––
––– 24050 –––
–––
220
–––
–––
370
–––
Conditions
V
DS
= 50V, I
D
= 35A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 360V
V
GS
= 10V
V
DD
= 300V
I
D
= 35A
R
G
= 1.0
R
D
= 8.5
V
GS
= 0V
V
DS
= 25V
= 1.0MHz,
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
pF
ns
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