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參數(shù)資料
| 型號： | IRFPS40N50L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）典型.\u003d 0.087ohm，身份證\u003d 46A條） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 111K |
| 代理商： | IRFPS40N50L |
IRFPS40N50L
SUPER TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
8
www.irf.com
B
1.60 [.063]
MAX.
1
2
0.25 [.010]
B A
3
0.13 [.005]
2.35 [.092]
1.65 [.065]
2.15 [.084]
1.45 [.058]
5.50 [.216]
4.50 [.178]
E
E
3X1.45 [.058]
16.10 [.632]
15.10 [.595]
20.80 [.818]
19.80 [.780]
14.80 [.582]
13.80 [.544]
4.25 [.167]
3.85 [.152]
5.45 [.215]
1.30 [.051]
0.70 [.028]
13.90 [.547]
13.30 [.524]
16.10 [.633]
15.50 [.611]
4
0.25 [.010]
B A
4
3.00 [.118]
2.00 [.079]
A
2X R
SECTION E-E
2X
1.30 [.051]
1.10 [.044]
3X
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]
3. CONTROLLING DIMENSION: MILLIMETER
4. OUTLINE CONFORMS TO J EDEC OUTLINE TO-274AA
NOTES:
3 - SOURCE
4 - DRAIN
2 - DRAIN
1 - GATE
3 - EMITTER
4 - COLLECTOR
1 - GATE
2 - COLLECTOR
LEAD ASSIGNMENTS
MOSFET
IGBT
C
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR
’
s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
05/01
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| IRFPS40N50LPBF | 功能描述:MOSFET N-Chan 500V 46 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS40N60K | 功能描述:MOSFET N-Chan 600V 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS40N60KPBF | 功能描述:MOSFET N-Chan 600V 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS43N50 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A) |
| IRFPS43N50K | 功能描述:MOSFET N-Chan 500V 47 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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