- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384496 > IRFP460 (IXYS CORP) N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源擊穿電壓500V,導通電阻0.27Ω的N溝道增強型MegaMOS功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | IRFP460 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源擊穿電壓500V,導通電阻0.27Ω的N溝道增強型MegaMOS功率MOSFET) |
| 中文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 77K |
| 代理商： | IRFP460 |
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 12 A, pulse test
13
21
S
C
iss
C
oss
C
rss
4200
450
135
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
23
81
85
65
35
ns
ns
ns
ns
V
GS
R
G
= 4.3
,
(External)
= 10 V, V
DS
= 250 V, I
D
= 20 A
120
130
98
Q
g(on)
Q
gs
Q
gd
135
28
62
210
40
110
nC
nC
nC
V
GS
= 10 V, V
DS
= 200 V, I
D
= 20 A
R
thJC
R
thCK
0.45
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
20
A
I
SM
Repetitive; pulse width limited by T
JM
80
A
V
SD
I
= 20 A, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.8
V
t
rr
Q
rr
I
F
= 20 A, -di/dt = 100 A/
μ
s, V
R
= 100 V
570
5.7
860
ns
μC
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
IRFP 460
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關PDF資料 |
PDF描述 |
|---|---|
| IRFP4710 | Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) |
| IRFPE30 | Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) |
| IRFPE40 | Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A) |
| IRFPE50 | Power MOSFET(Vdss=800V, Rds(on)=1.2ohm, Id=7.8A) |
| IRFPF30 | Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP460_R4943 | 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460A | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460A_R4944 | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460APBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP460APBF | 制造商:International Rectifier 功能描述:MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。