參數(shù)資料
型號: IRFP460
廠商: 意法半導(dǎo)體
英文描述: N-Channel 500V-0.22Ω-20A- TO-247 PowerMESH MOSFET(N溝道MOSFET)
中文描述: N溝道500V -0.22Ω- 20A條至247 PowerMESH MOSFET的(不適用溝道MOSFET的)
文件頁數(shù): 1/8頁
文件大?。?/td> 91K
代理商: IRFP460
IRFP460
N - CHANNEL 500V - 0.22
- 20 A - TO-247
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.22
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidated strip layout-based MESH
OVERLAY
process. This technology matches
and improves the performances compared with
standardparts from varioussources.
APPLICATIONS
I
HIGH CURRENT SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTINGEQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
September 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
500
500
±
20
20
13
80
250
2
3.5
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
20
Α
, di/dt
160 A/
μ
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.27
I
D
IRFP460
500 V
20 A
1
2
3
TO-247
1/8
相關(guān)PDF資料
PDF描述
IRFZ40FI N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
IRFZ40 N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
IRFZ40 N-CHANNEL POWER MOSFETS
IRFZ42 N-CHANNEL POWER MOSFETS
IRFZ45 N-CHANNEL POWER MOSFETS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP460_R4943 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP460A 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP460A_R4944 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP460APBF 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP460APBF 制造商:International Rectifier 功能描述:MOSFET