參數(shù)資料
型號(hào): IRFZ40FI
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
中文描述: N溝道增強(qiáng)模式功率MOS晶體管(不適用溝道增強(qiáng)模式功率MOSFET的)
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 181K
代理商: IRFZ40FI
IRFZ40
IRFZ40FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
I
TYPICAL R
DS(on)
= 0.022
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
50 V
50 V
R
DS(on)
< 0.028
< 0.028
I
D
IRFZ40
IRFZ40FI
50 A
27 A
1
2
3
TO-220
ISOWATT220
July 1993
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IRFZ40
IRFZ40FI
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (cont.) at T
c
= 25
o
C
Drain Current (cont.) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
50
50
50
50
V
V
±
20
V
A
50
27
I
D
35
200
150
19
200
45
A
A
W
I
DM
(
)
P
tot
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
1
0.3
2000
W/
o
C
V
o
C
o
C
V
ISO
T
stg
T
j
-65 to 175
175
1
2
3
1/9
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PDF描述
IRFZ40 N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
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