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參數(shù)資料
| 型號： | IRFP17N50L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）典型.\u003d 0.28ohm，身份證\u003d 16A條） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IRFP17N50L |
IRFP17N50L
2
www.irf.com
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.6
–––
0.28 0.32
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.9A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/
°
C
V
μA
mA
5.0
50
2.0
100
-100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25
°
C (unless otherwise specified)
Symbol
Parameter
g
fs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
nA
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 3.0mH, R
G
= 25
,
I
AS
= 16A.
I
SD
≤
16A, di/dt
≤
347A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
390
16
22
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.50
–––
Max.
0.56
–––
62
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
Min. Typ. Max. Units
11
–––
–––
–––
–––
–––
–––
–––
–––
21
–––
51
–––
50
–––
28
–––
2760
–––
–––
325
–––
37
–––
3690
–––
–––
84
–––
159
Conditions
V
DS
= 50V, I
D
= 9.9A
I
D
= 16A
V
DS
= 400V
V
GS
= 10V
V
DD
= 250V
I
D
= 16A
R
G
= 7.5
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
–––
130
33
59
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
ns
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