- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379238 > IRFI830B (FAIRCHILD SEMICONDUCTOR CORP) 500V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRFI830B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 封裝： | I2PAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 677K |
| 代理商： | IRFI830B |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFW830B / IRFI830B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
4.5A, 500V, R
DS(on)
= 1.5
@V
GS
= 10 V
Low gate charge ( typical 27 nC)
Low Crss ( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFW830B / IRFI830B
500
4.5
2.9
18
±
30
270
4.5
7.3
5.5
3.13
73
0.58
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.71
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
!
S
!
!
!
D
G
D
2
-PAK
IRFW Series
I
2
-PAK
IRFI Series
G
S
D
G
S
D
相關PDF資料 |
PDF描述 |
|---|---|
| IRFM014A | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為60V，導通電阻為0.14Ω，漏電流為2.8A）) |
| IRFM210A | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為200V，導通電阻為1.5Ω，漏電流為0.77A）) |
| IRFN214B | 250V N-Channel MOSFET |
| IRFNL210B | 200V N-Channel MOSFET |
| IRFP140A | Advanced Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFI830BTU | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFI830G | 功能描述:MOSFET N-Chan 500V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFI830GPBF | 功能描述:MOSFET N-Chan 500V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFI840 | 制造商:Vishay Semiconductors 功能描述:500V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220 FULLPA - Bulk 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| IRFI840A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。