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參數(shù)資料
| 型號： | IRFN214B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 600 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 607K |
| 代理商： | IRFN214B |
2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
I
IRFN214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast.
Features
0.6A, 250V, R
DS(on)
= 2.0
@V
GS
= 10 V
Low gate charge ( typical 8.1 nC)
Low Crss ( typical 7.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
! "
!
!
S
!
"
"
D
G
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFN214B
250
0.6
0.4
2.4
±
30
45
0.6
0.18
4.8
1.8
0.01
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
A
= 25°C)
- Continuous (T
A
= 70°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
L
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ
--
--
Max
70
100
Units
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
G
S
D
TO-92
IRFN Series
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFN214BTA | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFN214BTA_FP001 | 功能描述:MOSFET 250V N-CHAN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFN240 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3SMD-1 - Bulk |
| IRFN240SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRFN250 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 27.4A 3SMD-1 - Bulk |
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