參數(shù)資料
型號: IRFG5210
英文描述: TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 200V V(BR)DSS | 680MA I(D) | DIP
中文描述: 晶體管| MOSFET的|陣|互補| 200伏五(巴西)直| 680MA(?。﹟雙酯
文件頁數(shù): 7/12頁
文件大?。?/td> 193K
代理商: IRFG5210
www.irf.com
7
IRFG5210
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
10V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
V
GS
N-Channel
Q1,Q3
.
25
50
75
100
125
150
0
30
60
90
120
150
Starting T , Junction Temperature ( C)
E
A
ID
TOP
BOTTOM
0.30A
0.43A
0.68A
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