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參數(shù)資料
| 型號： | IRFG5210 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 200V V(BR)DSS | 680MA I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|陣|互補| 200伏五（巴西）直| 680MA（?。﹟雙酯 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 193K |
| 代理商： | IRFG5210 |
12
www.irf.com
IRFG5210
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = - 50V, starting TJ = 25
°
C, L= 475mH,
Peak IL = - 0.68A, VGS = -10V
~
ISD
≤
- 0.68A, di/dt
≤
- 290A/
μ
s,
VDD
≤
-200V, TJ
≤
150
°
C
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25
°
C, L= 276mH,
Peak IL = 0.68A, VGS = 10V
ISD
≤
0.68A, di/dt
≤
290A/
μ
s,
VDD
≤
200V, TJ
≤
150
°
C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Case Outline and Dimensions — MO-036AB
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 04/02
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