參數(shù)資料
型號： IRFF9220
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs
中文描述： 2.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù)： 4/7頁
文件大?。?/td> 327K
代理商： IRFF9220
4-110
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-20
-10
-1.0
-0.1
-1.0
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
OPERATION IN THIS AREA
IS LIMITED BY r
DS(ON)
100
μ
s
1ms
10ms
DC
100ms
10
μ
s
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
-0.01
-1000
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-1
-2
-3
-4
-5
-50
-9V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
PULSE DURATION = 80
μ
s
0
V
GS
= -8V
-10V
0
-1
0
-1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-3
-5
-2
-3
I
D
,
-4
-4
-5
V
GS
= -10V
V
GS
= -9V
PULSE DURATION = 80
μ
s
V
GS
= -4V
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
-5
-4
-3
-2
-1
0
0
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
PULSE DURATION = 80
μ
s
V
DS
≥
I
D(ON)
x r
DS(ON)
MAX
I
D
,
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
3
4
8
12
16
r
D
,
I
D
, DRAIN CURRENT (A)
20
4
0
1
2
V
GS
= -20V
PULSE DURATION = 2
μ
s
V
GS
= -10V
5
O
)
N
2.5
1.5
1.0
0.5
0
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
120
2.0
80
V
GS
= -10V, I
D
= -1.5A
160
O
IRFF9220
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