參數(shù)資料
型號(hào)： IRFF9220
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs
中文描述： 2.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù)： 3/7頁
文件大小： 327K
代理商： IRFF9220
4-109
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Rectifier
-
-
-2.5
A
Pulse Source to Drain Current
(Note 3)
-
-
-10
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
C
= 25
o
C, I
SD
= -2.5A, V
GS
= 0V, (Figure 13)
T
J
= 150
o
C, I
SD
= -2.5A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -2.5A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
-
300
-
ns
Reverse Recovery Charge
-
1.9
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 69.6mH, R
G
= 25
,
peak I
AS
= 2.5A (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
-2.5
-2.0
-1.5
-1.0
-0.5
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
N
T
10
-3
10
-2
1.0
10
-5
10
-4
0.01
0.1
10
10
-1
1
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
SINGLE PULSE
0.1
0.02
0.01
0.2
0.5
0.05
IRFF9220
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