參數(shù)資料
型號: IRFF9120
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
中文描述: 4 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 5/7頁
文件大?。?/td> 59K
代理商: IRFF9120
4-98
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
(Continued)
1.25
1.05
0.85
80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
0
40
120
160
B
0
-10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-50
C
500
400
300
200
100
0
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
I
D
, DRAIN CURRENT (A)
-2
-4
-6
-8
0
-10
3
0
2
g
f
,
1
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-100
-10
-1
-0.1
-0.4
-0.6
-0.8
-1.0
-1.2
-1.8
-1.4
-1.6
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
g(TOT),
TOTAL GATE CHARGE (nC)
4
8
12
16
0
20
-20
-15
0
-10
V
G
,
-5
V
DS
= -20V
I
D
= -8A
V
DS
= -80V
V
DS
= -50V
IRFF9120
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