參數(shù)資料
型號(hào): IRFF9120
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
中文描述: 4 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 4/7頁
文件大?。?/td> 59K
代理商: IRFF9120
4-97
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
1
0.1
1
10
100
V
DS
DRAIN VOLTAGE (V)
I
D
OPERATION IN THIS REGION
IS LIMITED BY r
DS(ON)
T
J
= MAX RATED
SINGLE PULSE
10
μ
s
1ms
DC
T
C
= 25
o
C
10ms
100ms
-4
-2
-20
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-30
-40
-8
I
D
,
10
-6
-50
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-9V
-8V
V
GS
= -7V
-6V
-5V
-4V
-10V
5
4
3
2
1
0
-1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-3
-4
-5
I
D
-10V
-9V
-8V
-7V
V = -6V
-5V
-4V
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
-2
-4
-6
-10
-6
-8
0
-2
-4
-10
I
D
-8
V
DS
I
D(ON)
x
r
DS(ON)
MAXIMUM
T
J
= 25
o
C
T
J
= 55
o
C
T
J
= 125
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-20
I
D,
DRAIN CURRENT (A)
-10
-5
-15
0
-25
2.0
1.6
1.2
0
0.4
r
D
,
V
GS
= -20V
0.8
V
GS
= -10V
O
PULSE DURATION = 2
μ
s
2.2
1.4
0.6
80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.8
1.0
0.2
0
40
120
160
O
V
GS
= -10V
I
D
= -2A
IRFF9120
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