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參數(shù)資料
| 型號(hào)： | IRFF220 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.5A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(3.5A, 200V, 0.800 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 325K |
| 代理商： | IRFF220 |
5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
(Continued)
1.25
1.05
0.85
0
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
-40
40
80
120
B
I
D
= 250
μ
A
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
1000
800
600
400
200
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
10
20
30
40
50
C
RSS
C
OSS
C
ISS
I
D
, DRAIN CURRENT (A)
2
4
6
8
0
10
5
4
3
0
2
g
f
,
80
μ
s PULSE TEST
1
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
1
0
1
3
4
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 150
o
C
2
10
2
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
4
8
12
16
0
20
20
15
0
10
V
G
,
5
I
D
= 3.5A
V
DS
= 40V
V
DS
= 100V
V
DS
= 160V
IRFF220
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PDF描述 |
|---|---|
| IRFF320 | 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET |
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| IRFF420 | 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET(1.6A, 500V, 3.000 Ω, N溝道功率MOS場(chǎng)效應(yīng)管) |
| IRFP150 | 40A, 100V, 0.055 Ohm,N-Channel PowerMOSFET(40A, 100V, 0.055 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF220 | 制造商:International Rectifier 功能描述:TRANSISTOR |
| IRFF220R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF221 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF221R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF222 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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