參數(shù)資料
型號： IRFF220
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 3.5A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(3.5A, 200V, 0.800 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
中文描述： 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù)： 2/7頁
文件大小： 325K
代理商： IRFF220
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFF220
200
200
3.5
14
±
20
20
0.16
85
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
V
GS
= 0V, I
D
= 250
μ
A (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±
20V
V
GS
= 10V, I
D
= 2.0A (Figures 8, 9)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, I
D
= 2.0A (Figure 12)
V
DD
= 0.5 x Rated BV
DSS
, R
G
= 9.1
,
V
GS
= 10V, I
D
≈
3.5A (Figures 17, 18)
R
L
= 27.4
for V
DSS
= 100V,
R
L
= 20.3
for V
DSS
= 75V,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
200
-
-
V
Gate to Threshold Voltage
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
3.5
-
-
A
Gate to Source Leakage Forward
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.5
0.800
Forward Transconductance (Note 2)
1.5
2.25
-
S
Turn-On Delay Time
-
20
40
ns
Rise Time
-
30
60
ns
Turn-Off Delay Time
-
50
100
ns
Fall Time
-
30
60
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 3.5A, V
DS
= 0.8 x Rated BV
DSS,
I
g(REF)
= 1.5mA (Figures 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
-
11
15
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
5.0
-
nC
Gate to Drain “Miller” Charge
-
6.0
-
nC
Input Capacitance
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
450
-
pF
Output Capacitance
-
150
-
pF
Reverse Transfer Capacitance
-
40
-
pF
Internal Drain Inductance
Measured from the
DrainLead,5mm(0.2in)
from Header to Center
of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 5mm
(0.2in) from Header and
Source Bonding Pad
-
15
-
nH
Junction to Case
R
θ
JC
R
θ
JA
-
-
6.25
o
C/W
o
C/W
Junction to Ambient
Free Air Operation
-
-
175
L
D
L
S
D
S
G
IRFF220
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFF220 制造商:International Rectifier 功能描述:TRANSISTOR
IRFF220R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.5A I(D) | TO-205AF
IRFF221 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFF221R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-205AF
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