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參數(shù)資料
| 型號： | IRFBC40AS |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 600V電壓的Rds（on）最大值\u003d 1.2ohm，身份證\u003d 6.2A） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 92K |
| 代理商： | IRFBC40AS |
IRFBC40
N - CHANNEL 600V - 1.0
- 6.2 A - TO-220
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 1.0
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidatedstrip layout-basedMESH
OVERLAY
process. This technology matches
and improves the performances compared with
standardparts from various sources.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
August 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
600
600
±
20
2
3.9
25
125
1.0
3
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
6.2
A, di/dt
≤
80 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 1.2
I
D
IRFBC40
600 V
6.2 A
1
2
3
TO-220
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFBC40ASPBF | 功能描述:MOSFET N-Chan 600V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC40ASTRL | 功能描述:MOSFET N-Chan 600V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC40ASTRLPBF | 功能描述:MOSFET N-Chan 600V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBC40ASTRR | 功能描述:MOSFET N-CH 600V 6.2A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFBC40ASTRRPBF | 功能描述:MOSFET N-Chan 600V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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