參數(shù)資料
型號(hào): IRFB16N50K
廠商: International Rectifier
英文描述: SMPS MOSFET
中文描述: MOSFET的開(kāi)關(guān)電源
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 169K
代理商: IRFB16N50K
IRFB16N50K
03/11/04
www.irf.com
1
SMPS MOSFET
HEXFET Power MOSFET
R
DS(on)
typ.
285m
Applications
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Circuits
Benefits
Low Gate Charge Qg results in Simple Drive
Requirement
Improved Gate, Avalanche and Dynamicdv/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Voltage and Current
Low R
DS(on)
PD - 95855
V
DSS
500V
I
D
17A
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, VGS @ 10V
I
DM
P
D
@T
C
= 25°C
Power Dissipation
Continuous Drain Current, VGS @ 10V
A
Pulsed Drain Current
W
Linear Derating Factor
Gate-to-Source Voltage
W/°C
V
V
GS
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Parameter
Typ.
–––
–––
–––
Max.
310
17
28
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
Max.
0.44
–––
62
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
-55 to + 150
300 (1.6mm from case )
10 lbf in (1.1N m)
Max.
17
11
68
280
2.3
± 30
8.0
TO-220AB
相關(guān)PDF資料
PDF描述
IRFB16N60L SMPS MOSFET
IRFB17N60K SMPS MOSFET
IRFB3207 HEXFET Power MOSFET
IRFS3207 HEXFET Power MOSFET
IRFSL3207 HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFB16N50KPBF 功能描述:MOSFET N-Chan 500V 17 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB16N60L 功能描述:MOSFET N-Chan 600V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB16N60LPBF 功能描述:MOSFET N-Chan 600V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB17N20D 功能描述:MOSFET N-CH 200V 16A TO-220AB RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFB17N20DPBF 制造商:International Rectifier 功能描述:MOSFET N 200V 16A TO-220