參數(shù)資料
型號： IRFB13N50A
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）最大值\u003d 0.450ohm，身份證\u003d 14A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 97K
代理商： IRFB13N50A
IRFB13N50A
2
www.irf.com
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 14A, V
GS
= 0V
T
J
= 125
°
C, I
F
= 14A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
i
RRM
t
on
Notes:
–––
–––
–––
–––
–––
370
4.4
21
1.5
550
6.5
31
V
ns
μC
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Parameter
Min. Typ. Max. Units
8.1
–––
–––
–––
–––
–––
–––
–––
–––
15
–––
39
–––
39
–––
31
–––
1910
–––
–––
290
–––
11
–––
2730
–––
–––
82
–––
160
Conditions
V
DS
= 50V, I
D
= 8.4A
I
D
= 14A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 14A
R
G
= 7.5
V
GS
= 10V,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
81
20
36
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
S
D
G
14
56
A
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.55
–––
–––
0.450
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.4A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/
°
C
V
4.0
25
250
100
-100
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25
°
C, L = 5.7mH, R
G
= 25
,
I
AS
= 14A, dv/dt = 7.6V/ns. (See Figure 12a)
I
SD
≤
14A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
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