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參數(shù)資料
| 型號： | IRFAC40 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Multipole Connector |
| 中文描述： | 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 67K |
| 代理商： | IRFAC40 |
5-3
IRFAC40, IRFAC42
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
1300
-
pF
Output Capacitance
C
OSS
160
pF
Reverse Transfer Capacitance
C
RSS
30
pF
Internal Drain Inductance
L
D
Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
-
13
-
nH
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.0
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
6.2
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
25
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 6.2A, V
GS
= 0V, (Figure 13)
-
-
1.5
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/
μ
s
200
450
940
ns
Reverse Recovered Charge
Q
RR
T
J
= 25
o
C, I
SD
= 6.2A, dI
SD
/dt = 100A/
μ
s
1.8
3.8
7.9
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 16mH, R
G
= 25
, peak I
AS
= 6.8A. See Figures 15, 16.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| IRFAC42 | 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs |
| IRFAE40 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
| IRFAF50 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
| IRFAG40 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| IRFAG50 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFAC40R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.2A I(D) | TO-204AA |
| IRFAC42 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs |
| IRFAC42R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA |
| IRFAC50 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFAE20 | 制造商:International Rectifier 功能描述: |
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