參數(shù)資料
型號: IRFAC42
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
中文描述: 5.4 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù): 1/7頁
文件大?。?/td> 67K
代理商: IRFAC42
5-1
Semiconductor
6.2A and 5.4A, 600V
r
DS(ON)
= 1.2
and 1.6
Repetitive Avalanche Energy Rated
Simple Drive Requirements
Ease of Paralleling
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental Type TA17426.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFAC40
TO-204AA
IRFAC40
IRFAC42
TO-204AA
IRFAC42
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
2156.2
IRFAC40,
IRFAC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
相關(guān)PDF資料
PDF描述
IRFAE40 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
IRFAF50 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
IRFAG40 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFAG50 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFB11N50 30 AMP MINIATURE POWER RELAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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