參數(shù)資料
型號: IRF843FI
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 450V五(巴西)直| 4A條(丁)| TO - 220AB現(xiàn)有
文件頁數(shù): 6/10頁
文件大?。?/td> 129K
代理商: IRF843FI
IRF840AS/L
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
-V
D D
DRIVER
A
15V
20V
Fig 12d.
Typical Drain-to-Source Voltage
Vs. Avalanche Current
0.0
1.0
2.0
3.0
4.0
5.0
6.0
IAV , Avalanche Current ( A)
540
550
560
570
580
590
600
610
VD
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature ( C)
E
ID
3.6A
5.1A
8.0A
TOP
BOTTOM
0.0
1.0
2.0
7.0
8.0
IAV , Avalanche Current ( A)
520
540
560
580
600
VD
相關(guān)PDF資料
PDF描述
IRF840 PowerMOS transistor Avalanche energy rated
IRF840 N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET
IRF840 N-CHANNEL POWER MOSFETS
IRF840 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF843R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-220AB
IRF8513PBF 功能描述:MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF8513TRPBF 功能描述:MOSFET MOSFT DUAL NCh 30V 11A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF8707GPBF 功能描述:MOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF8707GTRPBF 功能描述:MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube