參數資料
型號: IRF8010
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數: 8/8頁
文件大?。?/td> 494K
代理商: IRF8010
IRF8010
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
8
www.irf.com
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1M
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9B 1M
A
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
08/02
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
c
Repetitive rating; pulse width limited by
max. junction temperature.
d
Starting T
J
= 25°C, L = 0.31mH, R
G
= 25
,
I
AS
= 45A.
e
I
SD
45A, di/dt
110A/μs, V
DD
V
(BR)DSS
,
T
J
175°C.
Notes:
f
Pulse width
300μs; duty cycle
2%.
g
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
h
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
TO-220 package is not recommended for Surface Mount Application.
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