- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385443 > IRF7809AV (International Rectifier) N-Channel Application-Specific MOSFETs PDF資料下載
參數(shù)資料
| 型號： | IRF7809AV |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel Application-Specific MOSFETs |
| 中文描述： | N溝道特定應(yīng)用MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | IRF7809AV |
IRF7809AV
2
www.irf.com
Parameter
Min
Typ
Max
Units
Conditions
Diode Forward
Voltage*
V
SD
1.3
V
I
S
= 15A
, V
GS
= 0V
Reverse Recovery
Charge
Q
rr
120
nC
di/dt
~
700A/μs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
di/dt = 700A/μs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Q
rr(s)
150
nC
Parameter
Drain-to-Source
Breakdown Voltage
Min
30
Typ
–
Max
–
Units
V
Conditions
V
GS
= 0V, I
D
= 250μA
BV
DSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
R
DS
(on)
7.0
9.0
m
V
GS
= 4.5V, I
D
= 15A
V
GS(th)
I
DSS
1.0
V
V
DS
= V
GS
,I
D
= 250μA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
V
GS
= ±12V
Drain-Source Leakage
30
150
μA
Gate-Source Leakage
Current*
Total Gate Chg Cont FET
I
GSS
±100
nA
Q
G
Q
G
Q
GS1
41
62
V
GS
=5V, I
D
=15A, V
DS
=20V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 20V, I
D
= 15A
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
36
7.0
54
Q
GS2
2.3
nC
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)
Output Charge*
Gate Resistance
Turn-on Delay Time
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d
(off)
t
f
C
iss
C
oss
12
14
I
D
=15A, V
DS
=16V
21
30
1.5
14
45
V
DS
= 16V, V
GS
= 0
V
DD
= 16V, I
D
= 15A
V
GS
= 5V
Clamped Inductive Load
Rise Time
Turn-off Delay Time
36
96
ns
Fall Time
Input Capacitance
10
3780
–
–
Output Capacitance
Reverse Transfer Capacitance C
rss
Source-Drain Rating & Characteristics
–
–
1060
130
–
–
pF
V
DS
= 16V, V
GS
= 0
Electrical Characteristics
Current
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400 μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
Typical values measured at V
GS
= 4.5V, I
F
= 15A.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7809A | Chipset for DC-DC Converters |
| IRF7811A | Chipset for DC-DC Converters |
| IRF7811AV | N-Channel Application-Specific MOSFETs |
| IRF7811W | Power MOSFET for DC-DC Converters |
| IRF7822 | Power MOSFET for DC-DC Converters |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7809AVHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC |
| IRF7809AVPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7809AVTRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 13.3A 8SOIC - Tape and Reel |
| IRF7809AVTRPBF | 功能描述:MOSFET MOSFT 30V 13.3A 9mOhm 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7809PBF | 功能描述:MOSFET N-CH 28V 14.5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。