參數(shù)資料
型號： IRF7809AV
廠商： International Rectifier
英文描述： N-Channel Application-Specific MOSFETs
中文描述： N溝道特定應(yīng)用MOSFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 114K
代理商： IRF7809AV
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
Symbol
V
DS
V
GS
I
D
IRF7809A V
30
±12
13.3
14.6
100
2.5
3.0
–55 to 150
2.5
50
Units
V
T
A
= 25°C
T
L
= 90°C
A
I
DM
P
D
T
A
= 25°C
T
L
= 90°C
W
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
T
J
,
T
STG
I
S
I
SM
°C
A
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7809AV offers particulary low R
and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Max.
50
20
Units
°C/W
°C/W
R
θ
JA
R
θ
JL
Thermal Resistance
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
PD-90010
IRF7809AV
SO-8
10/26/00
IRF7809AV
R
DS
(on)
Q
G
Q
sw
Q
oss
7.0m
41nC
14nC
30nC
DEVICE CHARACTERISTICS
相關(guān)PDF資料
PDF描述
IRF7809A Chipset for DC-DC Converters
IRF7811A Chipset for DC-DC Converters
IRF7811AV N-Channel Application-Specific MOSFETs
IRF7811W Power MOSFET for DC-DC Converters
IRF7822 Power MOSFET for DC-DC Converters
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7809AVHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC
IRF7809AVPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7809AVTRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 13.3A 8SOIC - Tape and Reel
IRF7809AVTRPBF 功能描述:MOSFET MOSFT 30V 13.3A 9mOhm 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7809PBF 功能描述:MOSFET N-CH 28V 14.5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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