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參數(shù)資料
| 型號(hào)： | IRF7706 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-30V) |
| 中文描述： | 功率MOSFET（30V的減振鋼板基本\u003d-） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | IRF7706 |
HEXFET
Power MOSFET
10/04/00
IRF7706
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
-30
-7.0
-5.7
-28
1.51
0.96
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Linear Derating Factor 0.01 W/°C
V
GS
Gate-to-Source Voltage
± 20 V
T
J
, T
STG
Junction and Storage Temperature Range
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
A
W
W
-55 to + 150
°C
PD -94003
V
DSS
-30V
R
DS(on)
max
22m
@V
GS
= -10V
36m
@V
GS
= -4.5V
I
D
-
7.0A
-5.6A
Parameter
Max.
83
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
TSSOP-8
4 = G
3 = S
2 = S
1 = D
1
2
3
4
G
D
S
5
6
7
8
8 = D
7 = S
6 = S
5 = D
Description
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
Available in Tape & Reel
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7706GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF7706GTRPBF | 功能描述:MOSFET MOSFT PCh -30V -7A 22mOhm 48nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7706PBF | 制造商:International Rectifier 功能描述:MOSFET P-Channel 30V 7A TSSOP8 |
| IRF7706TR | 功能描述:MOSFET P-CH 30V 7A 8-TSSOP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7706TRPBF | 功能描述:MOSFET MOSFT PCh -30V -7A 22mOhm 48nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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