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參數(shù)資料
| 型號： | IRF7501 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=20V, Rds(on)=0.135ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 20V的，的Rds（on）\u003d 0.135ohm） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 143K |
| 代理商： | IRF7501 |
PRELIMINARY
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
4/30/98
V
DSS
=20V
R
DS(on)
= 0.135
IRF7501
Description
Parameter
Max.
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10μs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
20
2.4
1.9
19
1.25
0.8
0.01
16
± 12
5.0
A
W
W
W/°C
V
V
V/ns
°C
V
GSM
V
GS
dv/dt
TJ , TSTG
-55 to + 150
240 (1.6mm from case)
Absolute Maximum Ratings
Parameter
Max.
100
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
Micro8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ulrtra Low On-Resistance
l
Dual N-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
PD - 91265H
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7501HR | 制造商:International Rectifier 功能描述:20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A MICRO 8 PACKAGE - Rail/Tube |
| IRF7501PBF | 制造商:International Rectifier 功能描述:MOSFET DUAL NN MICRO-8 制造商:International Rectifier 功能描述:MOSFET, DUAL, NN, MICRO-8 |
| IRF7501TR | 功能描述:MOSFET DUAL N-CH 20V 2.4A MICRO8 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7501TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 2.4A 8-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 2.4A 8PIN MICRO8 - Tape and Reel |
| IRF7501TRPBF | 功能描述:MOSFET MOSFT DUAL NCh 20V 2.4A Micro 8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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