參數(shù)資料
型號: IRF7476
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=12V, Id=15A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 12V的,身份證\u003d 15A條)
文件頁數(shù): 8/8頁
文件大?。?/td> 111K
代理商: IRF7476
IRF7476
8
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting T
J
= 25°C, L = 2.3mH
R
G
= 25
, I
AS
= 12A.
Pulse width
400μs; duty cycle
2%.
When mounted on 1 inch square copper board.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial
market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
04/02
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7476HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 12V 15A 8-Pin SOIC
IRF7476PBF 功能描述:MOSFET 20V DUAL N-CH HEXFET 8mOhms 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7476PBF 制造商:International Rectifier 功能描述:MOSFET Transistor Transistor Polarity:N
IRF7476TRHR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 12V 15A 8SOIC - Tape and Reel
IRF7476TRPBF 功能描述:MOSFET MOSFT 12V 15A 8mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube