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參數(shù)資料
| 型號(hào)： | IRF7380PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | IRF7380PBF |
IRF7380PbF
4
www.irf.com
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
V = 0 V
T = 150 C
T = 25 C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
Fig 8.
Maximum Safe Operating Area
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
2
4
6
8
10
12
14
16
QG Total Gate Charge (nC)
0
4
6
8
10
12
VG
VDS= 64V
VDS= 40V
VDS= 16V
ID= 2.1A
V
SD
, Source-to-Drain Voltage (V)
I
S
,
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRF7380PBF_08 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:High frequency DC-DC converters Lead-Free |
| IRF7380QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7380QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Process Technology Ultra Low On-Resistance |
| IRF7380QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7380TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 3.6A 8PIN SO - Tape and Reel |
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