參數(shù)資料
型號: IRF7380PBF
廠商: International Rectifier
英文描述: HEXFET㈢Power MOSFET
中文描述: ㈢的HEXFET功率MOSFET
文件頁數(shù): 1/8頁
文件大?。?/td> 146K
代理商: IRF7380PBF
www.irf.com
1
08/10/04
IRF7380PbF
HEXFET Power MOSFET
R
DS(on)
max
73m @V
GS
= 10V
High frequency DC-DC converters
Lead-Free
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
Notes
through
are on page 8
SO-8
V
DSS
80V
I
D
3.6A
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 100°C
I
DM
P
D
@T
A
= 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
Maximum Power Dissipation
W
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
W/°C
V/ns
°C
dv/dt
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
R
θ
JL
R
θ
JA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount) *
2.0
-55 to + 150
Max.
80
± 20
3.6
2.9
29
0.02
2.3
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