參數(shù)資料
型號(hào)： IRF7311
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 209K
代理商： IRF7311
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
5/29/01
SO-8
V
DSS
= 20V
R
DS(on)
= 0.029
IRF7311
Description
Symbol
V
DS
V
GS
Maximum
20
± 12
6.6
5.3
26
2.5
2.0
1.3
100
4.1
0.20
5.0
-55 to + 150
Units
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25°C
T
A
= 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
I
DM
I
S
T
A
= 25°C
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Symbol
R
θ
JA
Limit
62.5
Units
Maximum Junction-to-Ambient
°C/W
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
PD - 91435C
相關(guān)PDF資料
PDF描述
IRF7313QPBF HEXFET Power MOSFET
IRF7316PBF HEXFET㈢Power MOSFET
IRF7324PBF HEXFET Power MOSFET(-20V, 0.018ohm)
IRF7328PBF HEXFET㈢ Power MOSFET
IRF7329PBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7311HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 6.6A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 6.6A 8PIN SO - Rail/Tube
IRF7311PBF 功能描述:MOSFET 20V DUAL N-CH HEXFET 29mOhms 18nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7311TR 功能描述:MOSFET 2N-CH 20V 6.6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7311TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 6.6A 8-Pin SOIC T/R
IRF7311TRPBF 功能描述:MOSFET MOSFT DUAL NCh 20V 6.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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