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參數(shù)資料
| 型號(hào)： | IRF730 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 400V-0.75Ω-5.5A - TO-220 PowerMESHTM MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道400V -0.75Ω- 5.5A -到220 PowerMESHTM MOSFET的（不適用溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 93K |
| 代理商： | IRF730 |
IRF730
N - CHANNEL 400V - 0.75
- 5.5A - TO-220
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.75
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidatedstrip layout-basedMESH
OVERLAY
process. This technology matches
and improves the performances compared with
standardparts from various sources.
APPLICATIONS
I
HIGH CURRENT SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
August 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
400
400
±
20
5.5
3.5
22
100
0.8
4.0
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
5.5 A, di/dt
≤
90
Α/μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 1
I
D
IRF730
400 V
5.5 A
1
2
3
TO-220
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF730 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF730_R4943 | 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7301 | 制造商:International Rectifier 功能描述:MOSFET DUAL NN LOGIC SO-8 |
| IRF7301HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 5.2A 8SOIC - Rail/Tube |
| IRF7301PBF | 功能描述:MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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