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參數(shù)資料
| 型號： | IRF740S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道400V -0.48Ω- 10A條，采用D2PAK PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 93K |
| 代理商： | IRF740S |
IRF740S
N - CHANNEL 400V - 0.48
- 10 A - D
2
PAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.48
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidatedstrip layout-basedMESH
OVERLAY
process. This technology matches
and improves the performances compared with
standardparts from various sources.
APPLICATIONS
I
HIGH CURRENT SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
August 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
400
400
±
20
10
6.3
40
125
1.0
4.0
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
10 A, di/dt
≤
120
Α/μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.55
I
D
IRF740S
400 V
10 A
1
3
D
2
PAK
TO-263
(Suffix ”T4”)
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF740S2515 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF740SPBF | 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF740ST4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB |
| IRF740STRL | 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF740STRLPBF | 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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